tsm35n03 25v n - channel mosfet 1 / 6 version: a07 to - 252 features advance trench process technology high density cell design for ultra low on - resistance application load switch dc - dc converters and motors drivers ordering information part no. package packing tsm35n03c p ro to - 252 2.5kpcs / 13 reel absolute maximum rating ( ta = 25 o c unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 25v v gate - source voltage v gs 20 v continuous drain current, v gs @4.5v. i d 35 a pulsed drain current, v gs @4.5v i dm 150 a continuous source current (diode conduction) a,b i s 20 a single pulse drain to source avalanche energy (v dd = 100v, v gs =10v, i as =2a, l=10mh, r g =25 ) eas 300 mj ta = 25 o c 57 maximum power dissipation ta = 70 o c p d 23 w operating junct ion temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit lead temperature (1/8 from case) t l 10 s junction to case thermal resistance r? jc 1.8 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 40 o c/w note s : a. maximum dc current limited by the package b. surface mounted on 1 x 1 fr4 board, t 10 sec. product summary v ds (v) r ds(on) (m) i d (a) 8.5 @ v gs = 10v 30 25 13 @ v gs = 4.5v 30 pin definition : 1. gate 2. drain 3. source block diagram n - channel mosfet
tsm35n03 25v n - channel mosfet 2 / 6 version: a07 electrical specifications ( ta = 25 o c unless otherwise noted ) parameter conditions symbol min typ max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 25 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 1.0 1.6 3.0 v gate body leakage v gs = 20v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 24v, v gs = 0v i dss -- -- 1.0 ua on - state drain current v ds 5v, v gs = 10v i d(on) 35 -- -- a v gs = 4.5v, i d = 30a -- 9.5 13 drain - source on - state resistance v gs = 10v, i d = 30a r ds(on) -- 6.5 8.5 m forward transconductance v ds = 10v, i d = 35a g fs -- 12 -- s diode forward voltage i s = 20a, v gs = 0v v sd -- 0 .87 1.5 v dynamic b total gate charge q g -- 10 25 gate - source charge q gs -- 3.6 10 gate - drain charge v ds = 15v, i d = 35a, v gs = 10v q gd -- 3 65 nc input capacitance c iss -- 1180 -- output capacitance c oss - - 270 -- reverse transfer capacitance v ds = 15v, v gs = 0v, f = 1.0mhz c rss -- 145 -- pf switching c turn - on delay time t d(on) -- 12 -- turn - on rise time t r -- 4 -- turn - off delay time t d(off) -- 32 -- turn - off fall time v dd = 15v, r l = 15 , i d = 1a, v gen = 10v, r g = 24 t f -- 6 -- ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to producti on testing. b. switching time is essentially independent of operating temperature.
tsm35n03 25v n - channel mosfet 3 / 6 version: a07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) output characteristics transfer characteristics on - resistance vs. drain c urrent gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm35n03 25v n - channel mosfet 4 / 6 version: a07 electrical characteristics curve ( ta = 25 o c , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage maximum safe operating area normalized thermal transient impedance, junction - to - ambient
tsm35n03 25v n - channel mosfet 5 / 6 version: a07 sot - 252 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to - 2 52 di mension millimeters inches dim min max min max a 2.3bsc 0.09bsc a1 4.6bsc 0.18bsc b 6.80 7.20 0.268 0.283 c 5.40 5.60 0.213 0.220 d 6.40 6.65 0.252 0.262 e 2.20 2.40 0.087 0.094 f 0.00 0.20 0.000 0.008 g 5.20 5.40 0.205 0.213 g1 0.75 0.85 0.030 0.033 g2 0.55 0.65 0.022 0.026 h 0.35 0.65 0.014 0.026 i 0.90 1.50 0.035 0.059 j 2.20 2.80 0.087 0.110 k 0.50 1.10 0.020 0.043 l 0.90 1.50 0.035 0.059 m 1.30 1.70 0.051 0.67
tsm35n03 25v n - channel mosfet 6 / 6 version: a07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. inf ormation contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc as sumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyri ght, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agre e to fully indemnify tsc for any damages resulting from such improper use or sale.
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